PART |
Description |
Maker |
MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40 SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40 4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
27C2000A-10 27C2000A-90 |
2M-BIT [256K x 8] CMOS EPROM
|
Macronix International Co., Ltd.
|
MX27C2000TI-90 27C2000-10 27C2000-12 27C2000-15 27 |
2M-BIT [256K x 8] CMOS EPROM
|
MCNIX[Macronix International]
|
MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
MX27C4111 27C4111 |
4M-BIT [512K x8/256K x16] CMOS EPROM From old datasheet system
|
Macronix 旺宏
|
27L256-12 27L256-20 27L256-25 27L256-15 |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM 256K比特[32Kx8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
MBM27C256A |
CMOS 256K UV EPROM
|
ETC
|
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited Fujitsu, Ltd.
|
A278308-70 A278308L-70 |
256K X 8 OTP CMOS EPROM
|
AMIC Technology
|
A27020-15 |
256K X 8 OTP CMOS EPROM
|
AMIC Technology
|